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  rev.1.00 aug 19, 2004 page 1 of 5 HRL0103C silicon schottky barrier diode for rectifying rej03g0367-0100 rev.1.00 aug 19, 2004 features ? low reverse voltage drop and suitable for high efficiency reverse current. ? extremely small flat package (efp) is suitable for surface mount design. ordering information type no. laser mark package code HRL0103C p efp pin arrangement cathode mark mark 1. cathode 2. anode 12 p
HRL0103C rev.1.00 aug 19, 2004 page 2 of 5 absolute maximum ratings (ta = 25 c) item symbol value unit peak reverse voltage v r m * 1 30 v reverse voltage v r 30 v average rectified current i o * 1 100 ma peak forward surge current i fm 300 ma non-repetitive peak forward surge current i fsm * 2 1 a junction temperature tj 125 c storage temperature tstg ? 55 to +125 c notes: 1. see from fig.3 to fig.5. 2. 10 ms sine wave 1 pulse. electrical characteristics (ta = 25 c) item symbol min typ max unit test condition v f1 ? ? 0.40 i f = 10 ma forward voltage v f2 ? ? 0.60 v i f = 100 ma i r 1 ? ? 0.1 v r = 5 v reverse current i r 2 ? ? 0.2 a v r = 10v capacitance c ? ? 8.0 pf v r = 0.5 v, f = 1 mhz thermal resistance rth(j-a) ? 800 ? c/w polyimide board * 1 notes : 1. polyimide board unit: mm 3.0 0.5 1.0 20h 15w 0.8t 0.3 2. please do not use the soldering iron due to avoid high stress to the efp package. 3. the material of lead is exposed for cutting plane. there for, soldering nature of lead tip part is considered as unquestioned. please kindly consider soldering nature.
HRL0103C rev.1.00 aug 19, 2004 page 3 of 5 main characteristic 0 1020304050 0 0.2 0.4 0.6 0.8 1.0 0 0.005 0.020 0.015 0.010 030 20 40 0.025 pulse test forward voltage v f (v) fig.1 forward current vs. forward voltage 10 ?3 10 ?2 10 ?5 10 ?4 1.0 10 ?6 10 ?1 10 ?3 10 ?8 10 ?5 10 ?4 10 ?7 10 ?6 reverse voltage v r (v) fig.2 reverse current vs. reverse voltage reverse current i r (a) forward current i f (a) ta = 75 c ta = 25 c pulse test ta = 75 c ta = 25 c ta = 50 c t t 0v tj = 125 c d=1/3 d=5/6 sin( =180 ) 10 0.030 0.15 0.10 0 reverse power dissipation pd (w) fig4. reverse power dissipation vs. reverse voltage reverse voltage v r (v) fig3. forward power dissipation vs. forward current forward current i f (a) forward power dissipation pd (w) dc 0.05 0 0.02 0.08 0.12 d=1/6 d=1/3 t t 0a tj = 25 c 0.04 0.06 0.10 d=1/2 d = ? t t sin( =180 ) d = ? t t d=1/2
HRL0103C rev.1.00 aug 19, 2004 page 4 of 5 050100 25 75 125 0 80 40 120 100 60 20 average rectified current i o ( m a) ambient temperature ta ( c ) fig.5 average rectified current vs. ambient temperature d=1/2 v r =v rrm /2 tj =125 c rth(j ? a)=800 c/w d=1/6 d=1/3 dc ? 25 sin( =180 )
HRL0103C rev.1.00 aug 19, 2004 page 5 of 5 package dimensions package code jedec jeita mass (reference value) efp ? ? 0.0007 g 0.8 0.05 1.0 0.05 0.3 0.05 0.6 0.05 0.47 0.03 0.13 0.05 as of january, 2003 unit: mm
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is a lways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme nt of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o r errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas techn ology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a nd algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci rcumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materi als. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lic ense from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500 fax: <1> (408) 382-7501 renesas technology europe limited. dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, united kingdom tel: <44> (1628) 585 100, fax: <44> (1628) 585 900 renesas technology europe gmbh dornacher str. 3, d-85622 feldkirchen, germany tel: <49> (89) 380 70 0, fax: <49> (89) 929 30 11 renesas technology hong kong ltd. 7/f., north tower, world finance centre, harbour city, canton road, hong kong tel: <852> 2265-6688, fax: <852> 2375-6836 renesas technology taiwan co., ltd. fl 10, #99, fu-hsing n. rd., taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. 26/f., ruijin building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1, harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices ? 2004. renesas technology corp., all rights reserved. printed in japan. colophon .1.0


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